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BSS138 J1 – N Channel Mosfet – SOT-23

  • N Channel MOSFET
  • Drain-Source Voltage: 50V
  • Drain Current Continuous: 200mA
  • Low On-Resistance:3.5Ω
  • Low output capacitance:12pF
  • Low threshole:1.5V

5.00

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Availability: 30 in stock

Product Description

BSS138 SMD N-Channel Logic Level Enhancement Mode Transistor, 50V, 220mA SOT-23 – Original

General description
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

 Specification
  • Package / Case: SOT-23
  • Drain Source Voltage: 50V
  • Gate Source Voltage:+/-20V
  • Drain Current:
  • Continuous: 0.22A
  • Pulsed:0.88A
  • Maximum Power Dissipation: 0.36W
  • Operate Above 25°C: 2.8mW/°C
  • Operating & Storage Junction Temperature Range: -55 to +150°C
  • Maximum Lead Temperature for Soldering Purposes: 300°C
  • Brand: NXP
Application:
  • DC to DC converter
  • Cellular & PCMCIA card
  • Cordless telephone
  • Power management in portable and battery etc.

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